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silicon carbide schottky cree diode z rec materials

Cree C3D02060A Silicon Carbide Schottky Diode C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V

C3D04060A V = 600 V Silicon Carbide Schottky Diode …

1 C3D04060A Re. D C3D04060A Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V

Cree C3D03060E Silicon Carbide Schottky Diode D a t a s h e e t: C 3 D 0 3 0 6 0 E R e v. C A C3D03060E–Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior

Cree C3D04060F Silicon Carbide Schottky Diode - Z-Rec

2017-5-1 · 1 C3D46F Re. F 1216 C3D04060F Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak) Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V • Fully Isolated Case F

C3D06060F V = 600 V Silicon Carbide Schottky Diode …

2017-2-15 · 1 C3D66F Rev. D, 4216 C3D06060F Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak) Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V • Fully Isolated Case F

Advanced Z-Rec™ Silicon Carbide Power Diodes | Aug …

2009-8-11 · Cree, Inc. announces availability of its Silicon Carbide (SiC) power products, world-class 600V SiC Junction Barrier Schottky (JBS) diodes. The new Z-Rec(TM) diodes provide improved device power efficiency and enhanced surge current capability, allowing system optimization for performance and cost in power conversion appliions ranging from 250W to 1500W.

Silicon Carbide Schottky Diode - Cree/Wolfspeed - …

2019-5-1 · Silicon Carbide Schottky Diode. Silicon Carbide Schottky Diode. Cree/Wolfspeed. Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ rectifiers has essentially no reverse recovery at 600 V, 650 V and 1200 V breakdown and is targeted for appliions where low

Cree C3D06060G Silicon Carbide Schottky Diode D a t a s h e e t: C 3 D 0 6 0 6 0 G R e v. I B C3D06060G–Silicon Carbide Schottky Diode Z-Rec™ RectifieR V RRM = 600 V I F(AVG) = 6 A Q c = 16 nC Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior

Silicon Carbide Schottky Diode - Cree/Wolfspeed - …

2019-5-18 · Silicon Carbide Schottky Diode. Silicon Carbide Schottky Diode. Cree/Wolfspeed. Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ and ZERO RECOVERY® rectifiers has essentially no reverse recovery at 600 V and 1200 V breakdown and is targeted for appliions

C4D10120D V = 1200 V RRM Z-Rec RectifieR I 18 A F; C Q

2014-5-4 · 1 Subect to change ithout notice. ZZZ.creepoer D a t a s h e e t: C 4 D 1 0 1 2 0 D C R e v.-FSM A C4D10120D–Silicon Carbide Schottky Diode Z-Rec™ RectifieR V RRM = 1200 V I F; T C <135˚C = 18 A Q c =69 nC Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Swtitching Benefits

Cree releases four 650V SiC Schottky diodes

Cree, a leader in silicon carbide (SiC) power devices, has expanded their extensive SiC Schottky diode portfolio with four new 650V devices. Developed in response to the power supply industry’s recent demand for components with a nominal voltage rating slightly higher than 600V, the new 650V Cree Z-Rec SiC Schottky diodes enable high efficiency power systems with improved reliability

C4D05120E V = 1200 V Silicon Carbide Schottky Diode …

2014-11-27 · 1 C4D05120E Re. C4D05120E Silicon Carbide Schottky Diode Z-Rec® RectifieR Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on V F Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency

Cree C3D04065A Silicon Carbide Schottky Diode - Z-Rec

2016-11-3 · 1 C3D04065A Re. A C3D04065A Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 650-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V

Silicon Carbide Schottky Diode - Cree/Wolfspeed - …

Browse DigiKey''s inventory of Silicon Carbide Schottky DiodeSilicon Carbide Schottky. Features, Specifiions, Alternative Product, Product Training Modules, and Datasheets are all available.

Silicon Carbide Schottky Diode - Cree/Wolfspeed - …

2019-5-18 · Silicon Carbide Schottky Diode. Silicon Carbide Schottky Diode. Cree/Wolfspeed. Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ and ZERO RECOVERY® rectifiers has essentially no reverse recovery at 600 V and 1200 V breakdown and is targeted for appliions

Cree C3D03060E Silicon Carbide Schottky Diode D a t a s h e e t: C 3 D 0 3 0 6 0 E R e v. C A C3D03060E–Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior

C3D08065A__

2012-10-11 · C3D08065A–Silicon Carbide Schottky Diode Z-Rec? RectifieR Features VRRM = 650 V IF(AVG) = 8 A Qc = 21 nC Package ? ? ? ? ? ? ? 650-Volt Schottky Rectifier

C3D06065A V = 650 V RRM I = 9 A -Rec Rectifier F Q

2015-4-21 · 1 C3D06065A Rev. C3D06065A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V F Benefits • Replace Bipolar with Unipolar Rectifiers

C3D10060A V = 600 V Silicon Carbide Schottky Diode …

2015-1-23 · 1 C3D10060A Rev. C C3D10060A Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V F Benefits • Replace Bipolar with Unipolar Rectifiers

Cree C3D03060A Silicon Carbide Schottky Diode PRELIMINARY D a t a s h e e t:-55 C 3 D 0 3 0 6 0 A R e v.-C3D03060A–Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior

C3D08065I WOLFSPEED, Silicon Carbide Schottky …

The C3D08065I is a Z-Rec™ silicon carbide Schottky Diode features zero reverse recovery current, high-frequency operation and temperature-independent switching behaviour. It …

C4D15120A V = 1200 V Silicon Carbide Schottky Diode …

1 C4D1512A Rev. C, 2216 C4D15120A Silicon Carbide Schottky Diode Z-Rec® Rectifier Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on V F Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses

Cree C3D20060D Silicon Carbide Schottky Diode - Z-Rec

2014-5-27 · 1 CVFD20065A Rev. CVFD20065A Silicon Carbide Schottky Diode Z-Rec® RectifieR Features • 650-Volt Schottky Rectifier • Reduced V F for Improved Efficiency • High Humidity Resistance • Zero Forward and Reverse Recovery Voltage • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V F Benefits

Cree C3D02060A Silicon Carbide Schottky Diode C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features • 600-Volt Schottky Rectifier • Optimized for PFC Boost Diode Appliion • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V

Performance comparison of SiC Schottky diodes and …

Performance Comparison of SiC Schottky Diodes CSD10060, 600 V, 10 A Cree SiC Schottky diode is used. we propose models for silicon-carbide MOSFET and Schottky diode and we analyze the

C3D06060F V = 600 V Silicon Carbide Schottky Diode …

2017-2-15 · 1 C3D66F Rev. D, 4216 C3D06060F Silicon Carbide Schottky Diode Z-Rec® Rectifier (Full-Pak) Features • 600-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on V • Fully Isolated Case F

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